| Producto |
Memoria Kingston 8 Gb. DDR3 1600 Mhz CL11 KVR16N11/8 |
| Descripción |
Kingston Memoria DDRIII 8GB PC1600 CL11 DIMM KVR16N11/8
EDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component |
| Especificaciones |
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin): 160ns (min.)
Row Active Time (tRASmin): 35ns (min.)
Maximum Operating Power: 2.580 W*
UL Rating: 94 V - 0
Operating Temperature: 0º C to 85ºC
Storage Temperature: -55ºC to +100ºC |
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 | | Servicio Técnico |
| Offline |
| | Ayuda Comercial |
| Offline |
| | Pago Seguro |
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PRECIOS I.V.A INCLUIDO
Quick Hard, S.L. 2000-2020
Av. Monforte de Lemos, 103 Lateral ( Barrio del Pilar )
28029 Madrid
Tfno 91 294 51 05
Horario :
Lunes a Viernes 10:00 a 14:00 y de 17:00 a 20:00
Sabados: 10:30 a 14:00
Todas las marcas y logotipos estan
registrad@s por sus respectivos propietarios. |
