KINGSTONMemoria Kingston 8 Gb. DDR3 1600 Mhz CL11 KVR16N11/8
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Memoria Kingston 8 Gb. DDR3 PC1600 CL11 DIMM
Tecnología : DDR3 Velocidad : 1600MHz Capacidad : DDR3
Especificaciones
| Descripción de Producto |
| Producto | Memoria Kingston 8 Gb. DDR3 1600 Mhz CL11 KVR16N11/8 |
| Descripción | Kingston Memoria DDRIII 8GB PC1600 CL11 DIMM KVR16N11/8 EDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB : Height 1.180” (30.00mm), double sided component |
| Especificaciones | CL(IDD): 11 cycles Row Cycle Time (tRCmin): 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin): 160ns (min.) Row Active Time (tRASmin): 35ns (min.) Maximum Operating Power: 2.580 W* UL Rating: 94 V - 0 Operating Temperature: 0º C to 85ºC Storage Temperature: -55ºC to +100ºC |